?2000 Fairchild Semiconductor International
Rev. A, July 2000
FYPF2004DN
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
T
C=25°°°°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics (per diode)
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Symbol Parameter Value Units
VRRM
Maximum Repetitive Reverse Voltage 40 V
VR
Maximum DC Reverse Voltage 40 V
IF(AV)
Maximum Average Rectified Current @ TC
= 115
°C20 A
IFSM
Maximum Forward Surge Current (per diode)
60Hz Single Half-Sine Wave
150 A
TJ, TSTG
Operating Junction and Storage Temperature -40 to +150
°C
Symbol Parameter Value Units
RθJC
Maximum Thermal Resistance, Junction to Case (per diode) 3.5
°C/W
Symbol Parameter Value Units
VFM *
Maximum Instantaneous Forward Voltage
IF
= 10A
IF
= 10A
IF
= 20A
IF
= 20A
TC
= 25
°C
0.55
TC
= 125
°C
0.49
TC
= 25
°C
0.67
TC
= 125
°C
0.65
V
IRM *
Maximum Instantaneous Reverse Current
@ rated VR
T
C
= 25
°
C
1
TC
= 125
°C
80
mA
FYPF2004DN
Features
 Low forward voltage drop
 High frequency properties and switching speed
 Guard ring for over-voltage protection
Applications
 Switched mode power supply
 Freewheeling diodes
TO-220F
1 2 3
1. Anode 2.Cathode 3. Anode
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